1 power transistors 2SD2052 silicon npn triple diffusion planar type for high power amplification complementary to 2sb1361 n features l satisfactory foward current transfer ratio h fe vs. collector cur- rent i c characteristics l wide area of safe operation (aso) l high transition frequency f t l optimum for the output stage of a hifi audio amplifier l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 150 150 5 15 9 100 3 150 C55 to +155 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ebo h fe1 h fe2 * h fe3 v be v ce(sat) f t c ob conditions v cb = 150v, i e = 0 v eb = 3v, i c = 0 v ce = 5v, i c = 20ma v ce = 5v, i c = 1a v ce = 5v, i c = 7a v ce = 5v, i c = 7a i c = 7a, i b = 0.7a v ce = 5v, i c = 0.5a, f = 1mhz v cb = 10v, i e = 0, f = 1mhz min 20 60 20 typ 20 150 max 50 50 200 1.8 2.0 unit m a m a v v mhz pf * h fe2 rank classification rank q s p h fe2 60 to 120 80 to 160 100 to 200 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter topC3 full pack package(a) 15.0 0.3 21.0 0.5 16.2 0.5 12.5 solder dip 3.5 0.7 15.0 0.2 5.0 0.2 11.0 0.2 10.9 0.5 5.45 0.3 3 2 1 1.1 0.1 2.0 0.2 0.6 0.2 2.0 0.1 f 3.2 0.1 3.2
2 power transistors 2SD2052 p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c c ob v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 120 100 80 60 40 20 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =3w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 20 16 12 8 4 t c =25?c i b =1000ma 700ma 600ma 500ma 800ma 900ma 400ma 300ma 200ma 100ma 50ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 02.4 2.0 1.6 0.4 1.2 0.8 0 20 16 12 8 4 t c =?5?c 25?c 100?c v ce =5v base to emitter voltage v be ( v ) collector current i c ( a ) 0.1 1 10 100 0.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 t c =100?c ?5?c 25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 v ce =5v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =5v f=1mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 10 10000 1000 100 30 300 3000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 i cp i c t=10ms 100ms dc non repetitive pulse t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2SD2052 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25?c and under natural convection. (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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